tunnelinggiantmagnetoresistive

由 Y Chen 著作 · 2022 · 被引用 9 次 — Here we propose a novel MFTJ Ni/bilayer In2Se3/BN/Ni, in which the resistance of the tunneling spin polarization electrons can be modulated by different ...

由 G Lan 著作 · 2023 · 被引用 5 次 — Giant Tunneling Magnetoresistance in Spin-Filter Magnetic Tunnel Junctions Based on van der Waals A-Type Antiferromagnet CrSBr.

由 T Song 著作 · 2018 · 被引用 971 次 — We demonstrate tunneling magnetoresistance that is drastically enhanced with increasing CrI3 layer thickness, reaching a record 19,000% for magnetic multilayer ...

由 Z Cui 著作 · 2022 · 被引用 1 次 — Giant tunneling magnetoresistance in two-dimensional magnetic tunnel junctions based on double transition metal MXene ScCr2C2F ... This article is licensed under ...

由 J Zhou 著作 · 2019 · 被引用 74 次 — The nonequilibrium study reveals a large tunneling magnetoresistance of 846% at 300 K, identifying significantly its parallel and antiparallel ...

由 L Šmejkal 著作 · 2022 · 被引用 83 次 — Giant and tunneling magnetoresistance are physical phenomena used for reading information in commercial spintronic devices.

Giant magnetoresistance and tunneling magnetoresistance arise when a magnetic field reorients the magnetization in different regions of a specimen causing a ...

Tunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ...

由 JW Yoo 著作 · 2010 · 被引用 60 次 — We studied magnetoresistance (MR) in La2/3Sr1/3MnO3 (LSMO)/organic semiconductor (OSC)/Fe heterojunction devices using rubrene (C42H28) as an organic ...

由 Z Wang 著作 · 2018 · 被引用 554 次 — Here we report magneto-transport measurements on exfoliated CrI3 crystals. We find that tunneling conduction in the direction perpendicular to ...